Abstract
Single-crystal diamond surfaces were implanted with chromium ions. Ion energies chosen were 120 and 180 keV. Ion doses of 1x10(17) cm(-2) were applied at a substrate temperature of 750 degrees C. Reduced lattice damage could be obtained by deposition of a titanium sacrificial layer with a thickness of 10 and 50 nm before implantation. Depth profiles of the elemental binding states were taken by photoelectron spectroscopy. The effect of the sacrificial layer thickness on diamond lattice damage was investigated by infrared spectroscopy.
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