Abstract

Thermally enhanced gas release of argon ions implanted at E = 600 eV, D = 10 16cm −2 from Ag films deposited onto Mo, Ta and W substrates under simultaneous argon ion irradiation has been investigated. Similar studies on gas release from Ag, Mo, Ta and W metal plates have been carried out for comparison. This allowed us to acquire data on temperature ranges of preferential gas retention and release. This is conditioned by the atomic mixing at the film-substrate boundary and depends on the difference in migration rates of the film and substrate materials and, as a consequence, on the different mutual penetration of the materials. A dependence has been established between the vacancy migration rates in the film and the substrate materials and the possibility of the film formation, either according to the type of substrate crystalline lattice or according to the type of film material.

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