Abstract
Influence of thin chalcogen X (S, Se, Te) interlayer between anode (indium–tin oxide, ITO) and a layer of N, N′-bis(3-methylphenyl)- N, N′-diphenylbenzidine (TPD) used as a hole-transport layer (HTL) on the operating characteristics of organic light-emitting diodes (OLEDs) of composition ITO/ X/TPD/Alq 3/Yb (Alq 3 – aluminum 8-quinolinolate) has been investigated. It was found that the sulphur layer decreases operating voltage and enhances operating stability of a device while the selenium or tellurium interlayers impair these characteristics.
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