Abstract
Amorphous diamond-like hydrogenated carbon lms a-C:H were formed on Si wafers by a direct ion beam deposition method from acetylene or a gas mixture of acetylene and hydrogen. The samples were irradiated in a scanning mode by second harmonic (wavelength ‚ = 532 nm) of a Q-switched YAG : Nd laser. The effect of laser irradiation was studied by Raman and infrared spectroscopy and spectroscopic ellipsometry. The changes in the optical spectra of the samples with different H amount were investigated in the dependence on laser intensity. Experimental data were interpreted taking into account the structural transformations of a-C:H lms.
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