Abstract
Nanoparticles of Cu were formed in the zinc oxide (ZnO) substrate by negative ion implantation. Zinc oxide was chosen, because of its possibility for photonic applications, as a semiconductor with high radiation resistance. Negative Cu ions of 60 keV were implanted to (0 0 0 1) oxygen-face single crystal. The total dose varied in a range of 1 × 10 15–1 × 10 17 ions/cm 2. After implantation and after post-irradiation annealing, optical absorption was measured in a UV-IR range and the radiation damage was evaluated by XRD and RBS. The formation of Cu nanoparticle was verified by a surface plasmon resonance peak in absorption spectra. The crystallinity of ZnO was kept well below the tolerance dose of 1 × 10 16 ions/cm 2, which is large in comparison with other semiconductors. It is concluded that ZnO is a promising candidate for nanoparticle-dispersed optical materials, together with functionality of semiconductor.
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