Abstract
The effects of varying the ammonia flux on the concentrations of background Si and free carriers and on deep traps for majority and minority carriers in n-GaP layers grown by vapour epitaxy have been studied by secondary ion mass spectrometry and deep level transient spectroscopy. The contribution from the background silicon to the free carrier concentration in samples variously doped with nitrogen is discussed. It is shown that the deep centre at eV may be attributed to silicon. The model of this centre in the form accounts for experimental results obtained in the present work and those already reported. The concentration of the dominant nonradiative recombination centre at eV is studied, depending on growth conditions, and its model is proposed in the form of a complex consisting of intrinsic defects.
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