Abstract
Abstract We have confirmed the theory of Ishibashi and Orihara for the frequency dependence of coercive fields in ferroelectric thin films.SrBi2NbTaO9, SrBi2Ta2O9, and PbZr1-x Ti x O3 (PZT) data from DeVilbis et al. reveal a power-law dependence of form Ec (f) = Bfd/α , where d is the dimensionality of domains (ca. unity in uniaxial ferroelectrics such as SBT and SBNT) and α is approximately 6, in agreement with theoretical predictions. Models are also presented for the polarization and fatigue data from NEC of micron-sized thin-film strontium bismuth tantalate capacitors, emphasizing behaviour at unsaturated voltages.
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