Abstract

Models describing the grain boundary (GB) diffusion in thin polycrystalline films for the B- and C- regimes under a stress field are reviewed. A new model is proposed which describes the GB diffusion in the C-regime under stress field for the case of a finite source on the surface which is in contact with the diffusant. Analytical solutions for the source and sink surface kinetics are obtained. The results of the calculations are discussed.

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