Abstract
Abstract The printability of 5X reticle defects at I-line is assessed using the resist modelling program SOLID. The photoresist exposure and development parameters were measured and used with a reticle pattern consisting of line/space arrays with programmed defects. Three-dimensional modelling output shows sub-micron resist profiles and adjacent defects. Results are also presented graphically, in terms of minimum defect printed vs. pattern size.
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