Modelling Study of Magnetic Field’s Effects on Solar Cell’s Transient Decay

Senghane Mbodji,Issa Zerbo,Gregoire Sissoko,Biram Dieng,Martial Zoungrana

doi:10.4236/wjcmp.2015.54029

Senghane Mbodji, Issa Zerbo + Show 3 more

Open Access

https://doi.org/10.4236/wjcmp.2015.54029

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Abstract

Experimental setup of transient decay which occurs between two steady state operating points is recalled. The continuity equation is resolved using both the junction dynamic velocity (Sf) and back side recombination velocity (Sb). The transient excess minority carriers density appears as the sum of infinite terms. Influence of magnetic field on the transient excess minority carriers density and transient photo voltage is studied and it is demonstrated that the use of this technique is valid only when the magnetic field is lower than 0.001 T.

Highlights

Recombination parameters of solar cells are often investigated considering the steady state [1]-[4] or one of the many transient decay techniques [5]-[10]
For the simulated modeling analyses, the transient excess minority carriers density was expressed as a function of magnetic field B, the junction dynamic velocity (Sf), the back side recombination velocity (Sb), the harmonic of order n, and the time (t)
The transient photo voltage decay occurring between two steady state operating points of a solar cell under magnetic field is studied

Summary

Introduction

Recombination parameters of solar cells are often investigated considering the steady state [1]-[4] or one of the many transient decay techniques [5]-[10]. As regards the transient states, we can cite the electroluminescence emission measurements [11], the frequency modulation approach [12], the open circuit voltage decay (OCVD) technique which is the most popular, the photocurrent decay (PCD) method [13], the stepped light-induced transient measurements of photocurrent and voltage (SLIM-PCV) [14], the microwave photocurrent decay (MWPCD) [15], the well-known transient state operating between two steady state real operating points [16], etc. The effective minority carrier diffusion length (Leff), the junction dynamic velocity (Sf) and the backside recombination velocity (Sb) are deduced [10]-[17]

Methods

Results

Conclusion