Abstract
Thermally induced stresses in growing shaped sapphire crystals are modelled using transient finite element simulations. Boundary conditions and mass changes are fixed on an expanding remeshed and updated grid. The actual stresses are obtained taking into account plastic relaxation through dislocation glide along basal, prismatic and pyramidal slip planes. For this purpose, phenomenological creep laws available for this material are implemented in the frame of thermally activated plasticity. The model is calibrated by comparison with directional mechanical tests, and validation is performed by growth simulations and dislocation density measurements on as-grown crystals.
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