Abstract
Numerical simulation is an important tool for analyzing and optimizing the multi-crystalline silicon ingot growth process for Photovoltaic (PV) applications. Heat transfer plays an important role in the DS process in which thermal stress, maximum principal stress and maximum shear stress are controlled by temperature gradient in the DS furnace. In this work, the von Mises stress, maximum principal stress, maximum shear stress and dislocation density were simulated for modified shape of side and top heaters. It is observed that the von Mises stress, maximum principal stress, maximum shear stress and dislocation density were reduced in mc- silicon ingot grown by modifying the heater of DS furnace.
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