Modelling of voltage changes in the n-p junction in the pulse mode

Abstract

The article presents the results of modeling the effect of the effective lifetime in the space charge region (SCR) of the n+-p junction on the impulse characteristics of silicon structures. The model is based on solving the fundamental system of differential equations for the transport of charge carriers in inhomogeneous semiconductors. The calculated time dependences of the voltage change in the SCR for a pulse voltage change on the n+-p-p+ structure correspond to the experimental data.