Abstract
We report band offset calculations for lattice-matched and pseudomorphically strainedInxGa1−xN/InyGa1−yN heterointerfaces using the model solid theory combined with ab initiocalculations. From the results obtained, we have calculated the bandgap of bulkInxGa1−xN on GaN as a function of the indium composition. We have also simulated the band edges of anInxGa1−xN/GaN heterostructure. A self-consistent analysis is made to investigate the effect of strains on theinterband transitions with the aim of achieving emissions at both visible andnear infrared wavelengths. An attempt to explain the results obtained will bepresented.
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