Abstract
The diffusion-limited leakage current densities of individual lateral collection photodiodes in 2-D focal plane arrays are calculated using a random walk method. Due to a unique relationship between the leakage current density and the collection efficiency of carriers generated close to a junction there is no necessity to sample the effects of carrier generation at all points throughout the array, giving great savings in computation time. The method is applicable to complex geometries and non-uniform material. Examples are given for arrays on square and hexagonal nets.
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