Abstract
Sidegating and backgating effects affect the I/V characteristics of a GaAs MESFET built on SI substrates. The basic charge trapping process can be related to current flowing through the channel-substrate interface. This effectively changes the channel thickness. For the side-gating effect, the observed voltage threshold for current pinch-off is explained by the breakdown of a parasitic lateral npn transistor. An equivalent circuit model is put forward to include the sidegating and backgating effects. Reasonable results have been obtained during simulation.
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