Abstract
An analytical subthreshold current of deep nanoscale short channel junctionless field-effect transistors (JL FETs) with a symmetric double-gate (DG) structure has been proposed. It is derived from two-dimensional Poisson's equation using a variable separation technique. The proposed models can exactly describe the behaviour of subthreshold I–V characteristics with nanoscale channel length without any empirical fitting parameter. The model accounts for channel length, body thickness, gate oxide thickness and body doping concentrations. The models are verified by comparison with TCAD simulations and show good agreement.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
