Abstract
Results are presented for the thermal stress distribution which produces dislocations in GaAs crystals grown by the LEC method. Stresses have been computed by finite-element methods from the temperature solutions recently obtained by Crowley, Stern and Hurle (see preceding paper) using radiative heat transfer methods. Various cone angles, melt-solid interface shapes and stages of growth have been modelled for a range of heat-loss conditions into the encapsulant. The results show that the stresses are strongly dependent on interface shape and heat loss, and the dependence varies with both cone angle and the stage of crystal development. Experimentally observed interface shapes are generally not those which lead to a minimisation of thermal stress.
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