Abstract
AbstractIt has been observed experimentally that the band edge photoluminescence of GaInNAs Quantum well (QW) materials is broadened resulting from band‐tailing, localised states or conduction band edge fluctuations. In this paper we develop a model for N compositional fluctuations causing conduction band edge fluctuations which localise the electrons into the resulting quantum dots (QDs). The electron dynamics in the QDs and QW states are examined using a rate equation approach and the carrier populations presented as a function of barrier height and temperature. This mechanism could lead to broad gain in GaInAsN QW structures which could be useful for broad band SOAs for optical communications (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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