Abstract
A new model for the calculation of the current density distribution in a heavily doped semiconductor bridge is described as a function of time and width of the bridge. During the initial stages of the discharge, when the total current is increasing rapidly with time, the current first appears at the edges of the bridge. After the initial stages, the current diffuses in to the centre of the device. The model described in this paper may aid in explaining the behaviours of uneven melting and vaporization of semiconductor bridge devices.
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