Abstract
The evolution of the polaritonic Rabi splitting versus the excitonic broadenings is analyzed within two different formalisms: the transfer-matrix and the quasiparticle models. The splittings are deduced from angle-resolved reflectivity measurements performed at 5 K and 300 K on two GaN microcavities grown on silicon. Although the quasiparticle model allows a qualitative analysis when the quality factor of the cavity is high, the transfer-matrix formalism is more appropriate for the interpretation of the reflectivity spectra, whatever the configuration of the structure.
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