Abstract
Abstract This paper deals with the modelling of thermal oxidation of silicon based on stress relaxation by viscous flow. An analysis of the anomalously high rate of dry oxidation occurring at low thickness is given. This initial regime is attributed to a reduced diffusivity in the vicinity of the Si-SiO2, interface due to the presence of high compressive stress. A model of oxidation based on stress-dependent diffusivity, namely the stress-state model, is then described. The model makes it possible to obtain the oxidation kinetics over a wide range of temperature. Moreover, the influence of stress both on the parabolic and linear kinetic constants is discussed. Finally, the effects of intrinsic oxidation stress on the structural properties of thermal oxides are also described. In particular, the role of growth temperature on densification phenomena is emphasized.
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