Abstract
We present results from a detailed simulation of InAsquantum dots embedded in an AlGaAs/GaAs heterostructure with aself-consistent three-dimensional solver of thePoisson-Schrödinger equation based on density functionaltheory and local density approximation. Single-electroneffects in the structure are evaluated by computing theelectrochemical potential by means of Slater's transition rule.We have evaluated the effect of strain in the InAs dot on thesingle-electron charging properties of the system, to assess theimportance of including strain in the design of single-electronmemories based on self-organized quantum dots.
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