Abstract
AbstractIn this paper we report on numerical modelling and optimisation of a novel heterojunction optical light emitter based on longitudinal transport of the electrons and holes. The real‐space‐transfer of the carriers into the quantum well takes place due to variation of the reverse and forward biased regions with applied longitudinal bias. We show that by altering individual features of the device we can achieve an increase in optical power of nearly 430 times that of the original device. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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