Modelling of Phosphorus and Boron Doping Concentration on SOI Wafer Based Diffusion Process

Anak Agung Ngurah Gde Sapteka,Anak Agung Ngurah Made Narottama,Kadek Amerta Yasa

doi:10.31940/logic.v20i1.1748

Abstract

High concentration of Boron and Phosphorus elements are required in diffusion process during the fabrication of semiconductor devices such as diode and transistor based on Silicon On Insulator (SOI) wafer. Achieving high level of these elements’ concentration is the entry point for further research in the field of electronics. For this reason, the concentration of the both elements was tested by flowing Boron and Phosphorus gas with flow rate of 1.5 litre per minute into the Nitrogen furnace for 5 minutes towards the surface of the SOI wafer samples at temperatures of 880, 900 and 950 degrees Celsius. This test was carried out at Michiharu Tabe Laboratory, Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan. Furthermore, the resistivity measurements of  samples with Boron and Phosphorus doping were carried out. The results of resistivity were then converted to obtain the concentrations of Boron and Phosphorus on the surface of SOI wafer sample. From the concentration and temperature data, it is obtained the modelling of concentration to temperature function for Boron and Phosphorus. The modelling results show that there is a linear correlation between high concentrations of Boron and Phosphorus to temperature.

Highlights

Phosphorus and Boron are important elements in the fabrication of semiconductor devices
This research is focused on the concentration of Phosphorus and Boron obtained from the diffusion process in the Silicon On Insulator (SOI) wafer layer, which is a wafer consisting of successive layers from top to bottom namely, Silicon, Insulator, and Silicon Substrate
Based on the research that has been carried out, this paper examines the doping concentration of Phosphorus and Boron in the SOI wafer-based diffusion process in a furnace using Nitrogen gas

Summary

Introduction

Phosphorus and Boron are important elements in the fabrication of semiconductor devices. Both elements are used as doping material in semiconductor such as Silicon to produce certain electrical, optical and structural properties. The Phosphorus element function is to produce n-type semiconductor materials, while the Boron element function is to produce p-type semiconductor materials. To produce n-type semiconductor material, Phosphorus vapor is flowed on the surface of a Silicon wafer. To produce p-type semiconductor material, Boron vapor is flowed on the surface of the Silicon wafer. This research is focused on the concentration of Phosphorus and Boron obtained from the diffusion process in the Silicon On Insulator (SOI) wafer layer, which is a wafer consisting of successive layers from top to bottom namely, Silicon, Insulator, and Silicon Substrate

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