Modelling of narrow-width SOI devices

Abstract

We have investigated the impact of quantum-mechanical space-quantization effects on the operation of a narrow-width SOI device structure. The presence of a two-dimensional carrier confinement results not only in a significant increase in the threshold voltage but also in its pronounced channel width dependence. In this work, we have used classical 3D Monte Carlo particle-based simulations. Quantum-mechanical space-quantization effects have been accounted for via an effective potential scheme. In a second effort, we have studied the fluctuations in the device characteristics introduced by discreteness of charge in the channel region of the device.