Modelling of Multigate MOSFET Short Channel Structure for Low Power Application

Abstract

The paper proposes a multi-gate structure for MOSFET and focuses on studying the structure with variations in parameters such as channel length, dielectric material, source material, and gate work function. By ensuring small device dimensions, the proposed structure has been simulated using the Silvaco-TCAD tool along with analysis of short-channel effects. The proposed structure can find its usage in low power and high-frequency applications due to high switching rates. The structure also possesses high transconductance at low gate voltages, increasing intrinsic gain and proving useful in RF devices. As the device is nano-scaled, it can prove worthy for fast switching applications with low losses.