Abstract
This article explores the magnitude of spin dependent collector current in a spin-valve transistor varying the combination of ferromagnetic layers at finite temperatures. In these calculations, the spatial inhomogeneity of the Schottky barrier at the emitter side and spin dependent self-energy effect in ferromagnets have been taken into account. In addition, the magnetocurrent has been presented as well. It has been ascertained that the magnitude of spin dependent collector current strongly depends on the type of spin-valve base since the inelastic scattering strength is different in each material. These calculations may help find the best structural combination of ferromagnetic layers in the spin-valve base.
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