Abstract
A physical model taking into consideration the effects of finite collector minority carrier lifetime and minority carrier blocking property of the low-high (n−n+) junction is proposed for predicting the bipolar transistor dc characteristics covering saturation and quasi-saturation operations. Solution for the electron and hole carrier profiles, recombination, drift and diffusion current densities, electric field distributions and voltage drops as a function of the collector current density is presented. The low-level injection model neglecting collector minority carrier recombination current within the injection region is also present. The validity of the complete model is verified by comparing the results obtained by the present analysis with experimental results available in the literature.
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