Abstract
AbstractThe effects of metal Joule heating in interconnects were studied numerically. Particular attention is devoted to the multilevel nature of interconnects in modem microelectronic devices. Heat conduction analyses were carried out to quantify the temperature rise in structures composed of various levels of metal lines under different electric current densities. Two types of metallization (aluminum and copper) and two types of interlevel dielectric (silicon dioxide and polyimide) were considered. It was found that increasing the total number of metal level and/or switching the dielectric from silicon dioxide to polymer-based low-k dielectrics can cause substantial temperature increases, pointing out that interconnect Joule heating can become a major reliability threat in future applications. Thermal stresses induced by the nonuniform temperature field were also analyzed.
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