Abstract
In this study we discuss the application of an earlier proposed model to GaAs growth in the HCl-Ga-AsH3-H2 system at hydrogen pressures in the range 103-105 Pa. The model takes into account the kinetic steps of gas phase diffusion, adsorption of the various species from the gas phase on the crystal surface and the chemical reaction itself, which produces the material to be deposited. A good quantitative description of the dependence of growth rate on hydrogen pressure, growth temperature, and input pressures of HCl and AsH3 is obtained. The model leads to a better understanding of the growth mechanism and allows proper choice of the deposition parameters in order to obtain optimum material characteristics.
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