Abstract
Modelling of EUV light sources based on microwave discharge in inhomogeneous flow of nonequilibrium plasma with multiply charged tin and xenon ions
Highlights
Extreme ultraviolet (EUV) lithography is key technology for further decrease of integral circuit (IC) scales [1]
A competitive alternative is microwave discharge supported by submillimeter wave radiation of modern high power gyrotrons
Microwave heating leads to nonequilibrium plasma with highenergy electrons and as a consequence high rates of electron impact ionization and excitation
Summary
Extreme ultraviolet (EUV) lithography is key technology for further decrease of integral circuit (IC) scales [1]. Microwave heating leads to nonequilibrium plasma with highenergy electrons and as a consequence high rates of electron impact ionization and excitation Two concepts of such EUV light sources were developed in IAP: based on tin plasma flow propagating through the open magnetic trap and freely expanding flow of xenon plasma [5, 6]. Plasmas with densities close to 1016 cm-3 that may be obtained in studied discharges are not optically thin even for energetic EUV light quanta For these conditions the constants k*jlh should be modified compared to optically thin limit by taking into account the effect of radiation trapping due to reabsorption of the emitted photons in the discharge volume.
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