Modelling of electrostatic gate operations in the Kane solid state quantum computer

Abstract

The nuclear spin quantum computer proposed by Kane [Nature 393 (1998) 133] exploits as a qubit array 31P dopants embedded within a silicon matrix. Single-qubit operations are controlled by the application of electrostatic potentials via a set of metallic ‘A’ gates, situated above the donors, on the silicon surface, that tune the resonance frequency of individual nuclear spins, and a globally applied RF magnetic field that flips spins at resonance. Coupling between qubits is controlled by the application of potentials via a set of ‘J’ gates, between the donors, that induce an electron-mediated coupling between nuclear spins. We report the results of the study of the electric field and potential profiles arising within the Kane device from typical gate operations. The extent to which a single nuclear spin can be tuned independently of its neighbours, by operation of an associated A-gate, is examined and key design parameters in the Kane architecture are addressed. Implications for current fabrication strategies involving the implantation of 31P atoms are discussed. Solution of the Poisson equation has been carried out by simulation using a TCAD modelling package (Integrated Systems Engineering AG).