Abstract
We present results of our 8-band k⃗ · p⃗ calculations of the emission energy of InAs/GaAs quantum dots (QDs) covered with GaAs1−xSbx strain reducing overlayer (SRO). In agreement with previous experimental observations we find a strong red shift of the emission with increasing Sb content. We explain this effect by: (1) The lowering of the valence band offset between the QD and the SRO with increasing Sb content resulting in the type-II QDs with holes confined in the SRO for Sb concentration above 14%. (2) The reduction of compressive strain inside the QDs. The contributions of these mechanisms to the total red shift are estimated and compared. For realistic shape and size of the QD and a realistic value of the SRO thickness the previously measured photoluminescence data are reproduced with fairly good accuracy.
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