Abstract
The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated capacitance–voltage characteristics as well as the switching characteristics of JFETs.
Highlights
IntroductionThe dynamic development of high-power electronic systems requires modern electronic components and devices that are characterized by improved electrical and thermal properties [1,2,3,4]
A new generation of junction field-effect transistors made of silicon carbide (SiC-Junction Field Effect Transistor (JFET)) has appeared on the market as a result of technological progress in the construction of semiconductor devices [1,3,5]
SiC-JFETs are characterized by better static properties, i.e., higher values of absolute maximum ratings of operating currents, terminal voltages and dissipated power as well as dynamic properties related to short switching times [5,6,7]
Summary
The dynamic development of high-power electronic systems requires modern electronic components and devices that are characterized by improved electrical and thermal properties [1,2,3,4]. The dynamic properties of a JFET depend on, among others, the values of diffusion and junction capacitances of the internal gate-source and gate-drain p–n junctions of the transistor [8,9,10]. Both capacitances are functions of the terminal voltage applied and play an important role in the forward and the reverse polarization of the device.
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