Abstract
In this paper, we introduce a model of molecular field effect transistor (MFET). Because of the small size of these devices (about 1 nm), and the near one-dimensional nature of charge transport within them, MFET modelling demands a rigorous quantum-mechanical basis. This is achieved in this model by using non-equilibrium Green function method to compute transport function and ultimately, the current-voltage (I-V) characteristics. The programme is written by using graphic user guide (GUI) in Matlab. The effects of material, temperature, and bias on I-V characteristics of the MFET have been considered.
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