Abstract
The model of the evolution of nano- and microstructures in the self-formation process of underetching (lateral etching) layers was created for analysis and design of new self-alignment and self-formation technologies semiconductor devices and integrated circuits. The program was realized on the basis of a personal computer with the processor INTEL PENTIUM 4 and MATLAB 5.3 software. The results of the simulation were given for the different initial configurations of nanostructures. The experimental investigations evolution of microstructures in lateral etching processes of amorphous and polycrystalline films were performed and the results presented.
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