Abstract
In order to understand changes in defect concentration during the electroforming process, we modelled the electroforming process in Ta/HfO2/Pt under constant bias voltage. For this purpose, kinetic Monte-Carlo and finite element methods were utilized. Vacancy profiles were obtained for forming voltages from 3 V to 5 V; modelling of lower stresses is time-consuming. It was found that with decreasing voltage, vacancies begin to accumulate near the inert electrode. When the voltage was dropped from 5 to 3 V, the thickness of such a layer increased by 1 nm, and electroforming time exponentially increase.
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