Modelling conduction in carbon nanotube networks with different thickness, chemical treatment and irradiation

Abstract

We show how the main features of the electronic transport properties of single-wall carbon nanotube (SWNT) networks can be understood in terms of a simple model involving metallic conduction interrupted by thin tunnelling barriers, backscattering by zone-boundary phonons, and variable range hopping. Within this framework we examine the effect of reducing the thickness of the SWNT networks, chemical treatments, and ion irradiation. The conduction mechanism can be tuned from variable-range hopping between localized states (for the thinnest networks), to metallic conduction interrupted by thin barriers through which conduction is by tunnelling (for thick freestanding films). Chemical treatment of the thick films by different molecules leads to retention of metallic character but changes (increases or decreases) the charge carrier density. For ion-irradiated thick films we find two competing effects: a change to hopping-type conduction in the direct impact layer that lowers conductivity, and annealing effects extending deeper than the ion penetration depth that increase conductivity and lead to a peak in conductivity as a function of irradiation dose. We briefly discuss current–voltage characteristics and possible Luttinger liquid effects.