Abstract
The method for producing power by integrating a beta source to semiconductors junction’s devices is called as betavoltaic energy conversion. [1]. In this study by using Monte Carlo (MC) method to simulate the distribution of electron- hole pairs (EHP) generated at each point in the cell under bombardment of 63Ni source for betavoltaic cell then the result of that Monte Carlo simulation will be used in the modelling and simulation of a betavoltaic cell CdS/CdTe heterojunction and their characteristics.
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