Modelling and simulation of organic (Pentacene) field effect transistor

Abstract

In this paper, we studied the simulation of the electrical parameters of an organic pentacene field-effect transistor (OFET) based on the Poole-Frenkel method, which aims to provide a better balance between static and dynamic performance parameters. This approach gives us a quick and easy way to model devices with strong nonlinear behaviour without going into the physics of the device. Metal gates, room temperature deposited gate dielectric, and vacuum deposited pentacene as a semiconductor are used in an inverted (bottom gate, top contact) and planar (bottom gate, bottom contact) device structure. The OFETs possess a channel length of 2 μm as well as a channel width of 10 mm. The Silvaco 2-D Atlas simulator is usedas the tool for finite element simulation. According to the simulation results, the planner structure's source electrode can deliver more current than the staggered structure. The contact resistance of the bottom contact structure (3.973×104Ω) was also found to be higher than that of the top contact structure (2.386×104Ω), which limits the mobility of the charge carriers within the semiconductor and, as a result, lowers the drain-source current.