Abstract
SiOxNy films are deposited by reactive sputtering from aSi target in Ar/O2/N2 atmospheres. In order to achievethe control of film composition and to keep a high deposition rate atthe same time, a new sputtering model based on Berg's work is providedfor the condition of double reactive gases. Analysis based on thismodel shows that the deposition process can easily enter thetarget-poisoning mode when the preset gas flow (N2 in this work)is too high, and the film composition will change from nitrogen-rich toSiO2-like with the increase of oxygen supply while keeping theN2 supply constant. The modelling results are confirmed in thedeposition process of SiOxNy. Target self-bias voltagesduring sputtering are measured to characterize the different sputteringmodes. FTIR-spectra and dielectric measurements are used to testify themodel prediction of composition. Finally, an optimized sputteringcondition is selected with the O2/N2 flow ratio varyingfrom 0 to 1 and N2 supply fixed at 1 sccm. Average depositionrate of 17 nm/min is obtained under this selected condition, which hassuggested the model validity and potential for industry applications.
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