Abstract
The modelling of a new 300 mm rapid thermal processing (RTP) system is described. Conventional raytracing techniques are used to determine lamp intensity distributions on both 200 and 300 mm wafers. Simulation results are verified using the `difference method' (difference between two process parameter distributions such as oxide thickness, where the absolute power of one single lamp is varied). Wafer rotation is incorporated in the model and its influence on the temperature distribution will be discussed. Off-line optimization of the temperature distribution is utilized using model-based control. Experimental results of implant annealing on both 200 and 300 mm are shown and critical parameters influencing the temperature uniformity are discussed.
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