Abstract
In this paper, we present recent progress in the growth, modelling, fabrication andcharacterization of gallium arsenide (GaAs) two-dimensional (2D) photonic-crystal slabcavities with embedded indium arsenide (InAs) quantum dots (QDs) that are designed forcavity quantum electrodynamics (cQED) experiments. Photonic-crystal modelling anddevice fabrication are discussed, followed by a detailed discussion of different failure modesthat lead to photon loss. It is found that, along with errors introduced during fabrication,other significant factors such as the presence of a bottom substrate and cavity axisorientation with respect to the crystal axis, can influence the cavity quality factor (Q). A useful diagnostic tool in the form of contour finite-difference time domain (FDTD) isemployed to analyse device performance.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
