Abstract
Conducting filament evolution in TiOx based resistive switching memory fabricated by simple oxidation of Ti film is investigated. Formation of titanium oxide is confirmed from the X-ray diffraction study. Forming is required to initiate the switching process. A bipolar analog switching is observed with a positive set and negative reset voltage. The switching properties in TiOx layer owing to the formation of conducting filament is confirmed from the conducting atomic force micrograph at different bias voltage. A significant change in surface topography as a filament formation during set and reset is presented. Conduction mechanism inside the device at various voltage and effect of tunnel width on current is studied. The effective tunnel width of conduction filament and related parameters for device using device modelling (Threshold Adaptive Memristor model) is studied. The device can be used for synaptic applications.
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