Modelisation of optoelectronic device based on Si/SiO 2 emitting red light

Abstract

In the attempt to realize quantum devices based on a resonant tunneling effect through Si/SiO 2 and emitting a red light at a key 0.644 μm wavelength, we have modeled SiO 2/Si/SiO 2 double barriers embedded between two n-doped Si layers. To study the quantum confinement in Si QW and obtain the potential shape, we have solved a set of coupled Schrödinger–Poisson equations self-consistently. The effects of Si well thickness on quantum confinement of electrons and heavy-holes levels are presented. The fundamental energy transition and oscillator strength are also examined as a function of well width. A blue shift of the emission energy is observed, when the thickness of the Si well is reduced. The desired red light at a key 0.644 μm wavelength is obtained with an acceptable recombination efficiency given by transition oscillator strength. The effect of an applied electric field has been investigated for this red emission.