Modeling the vertical growth of van der Waals stacked 2D materials using the diffuse domain method

Abstract

Vertically-stacked monolayers of graphene and other atomically-thin 2D materials have attracted considerable research interest because of their potential in fabricating materials with specifically-designed properties. Chemical vapor deposition has proved to be an efficient and scalable fabrication method. However, a lack of mechanistic understanding has hampered efforts to control the fabrication process beyond empirical trial-and-error approaches. In this paper, we develop a general multiscale Burton–Cabrera–Frank type model of the vertical growth of 2D materials to predict the necessary growth conditions for vertical versus in-plane (monolayer) growth of arbitrarily-shaped layers. This extends previous work where we developed such a model assuming the layers were fully-faceted (Ye et al 2017 ACS Nano 11 12780–8). To solve the model numerically, we reformulate the system using the phase-field/diffuse domain method that enables the equations to be solved in a fixed regular domain. We use a second-order accurate, adaptive finite-difference/nonlinear multigrid algorithm to discretize and solve the discrete system. We investigate the effect of parameters, including the van der Waals interaction energies between the layers, the kinetic attachment rates, the edge-energies and the deposition flux, on layer growth and morphologies. While the conditions that favor vertical growth generally follow an analytic thermodynamic criterion we derived for circular layers, the layer boundaries may develop significant curvature during growth, consistent with experimental observations. Our approach provides a mechanistic framework for controlling and optimizing the growth multilayered 2D materials.