Abstract
We proposed two different time-dependent modeling approaches for variation of device characteristics of perovskite solar cells under stress conditions. The first approach follows Sah-Noyce-Shockley (SNS) model based on Shockley–Read–Hall recombination/generation across the depletion width of pn junction and the second approach is based on thermionic emission model for Schottky diodes. The connecting point of these approaches to time variation is the time-dependent defect generation in depletion width (W) of the junction. We have fitted the two models with experimental data reported in the literature to perovskite solar cell and found out that each model has a superior explanation for degradation of device metrics e.g. current density and efficiency by time under stress conditions. Nevertheless, the Sah-Noyce-Shockley model is more reliable than thermionic emission at least for solar cells.
Highlights
Time dependent models have been rarely developed for curren-t–voltage (JV) characteristics of optoelectronic devices
It is observed that the curves show different Jsc and Voc values at different times but no change in FF is obtained. This mostly arise from missing Rs term in the modeling approach since it is known that the change in FF of a solar cells is related to series resistance of the cell
We have developed two different time-dependent modeling for degradation or recovery of the device characteristics of several perovskite solar cells
Summary
Time dependent models have been rarely developed for curren-t–voltage (JV) characteristics of optoelectronic devices. The currently available models are presented mainly in static mode which ignores materials and structural changes in the device such as defect generation and intermix of the adjacent layers or in-diffusion of the metallic con-tacts towards the junction These are the detrimental process that happen by time and cause degradation in device performance. We will partially use their modeling approach in this paper to develop from a static JV analysis to a time dependent JV curves or at least a current vs time approach In their modeling, Turturici et al have assumed that the defect generation follows an exponential trend by time in the p-type layer and negatively impacts on carrier collection at reverse biases. The modeling is based on a fundamentally different approach than the other theories like transient current and will start from Shockley–Read–Hall recombination or Thermionic emission theories
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