Abstract
The crystallization process of amorphous silicon induced by ahigh repetition rate scanning copper vapor laser is studied both experimentally and theoretically. The theoretical model employs the concept of explosive crystallization in both basic directions, parallel and perpendicular to the laser beam, and deals with the crystallization from the melt pool as well. A computational model is developed on the basis of this concept that simplifies the original 3-D problem into a set of 1-D solutions. Experimental results give evidence of an explosive-crystallization process propagating in the direction of the laser beam as well as in lateral direction. This process can be observed in a wide range of laser energy densities. For higher energy densities, the growth process results from solidification of melt pool mainly, which leads to the appearance of coarse-grained material. The results of computational simulations are in a qualitative agreement with the experiments.
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