Modeling the positive-feedback regenerative process of CMOS latchup by a positive transient pole method. II. Quantitative evaluation

Abstract

For pt. I see ibid., vol. 42, no. 6, p. 1141-48 (1995).The positive-feedback regenerative process in a p-n-p-n structure during CMOS latchup transition has been modeled by a time-varying positive transient pole. The maximum peak value of the positive pole and the time required to first initiate the positive pole are adopted as two useful and meaningful parameters to quantitatively investigate the influence of device parameters on the positive-feedback regeneration of CMOS latchup. Some design guidelines can be obtained to improve latchup immunity of CMOS IC's,.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>